Thermal mismatch biased rhombohedral structure of strained epitaxial CaF₂ films on Si(111)TEMPEL, A; MÄDER, M; ZEHE, A et al.Physica status solidi. A. Applied research. 1988, Vol 109, Num 2, pp 493-501, issn 0031-8965Article

Epitaxial Ag film formation on NaCl crystals in Knudsen gases of ArOGURA, I; SUZUKI, S; NAGASHIMA, S et al.Applied surface science. 1992, Vol 60-61, pp 672-676, issn 0169-4332Conference Paper

X-ray analysis of GaAs surface reconstructions in H₂ and N₂ atmospheresKISKER, D. W; FUOSS, P. H; TOKUDA, K. L et al.Applied physics letters. 1990, Vol 56, Num 20, pp 2025-2027, issn 0003-6951Article

Ex-situ-Untersuchungen von molekularstrahl-abgeschiedenen Schichten auf Silicium-WafernGONZALES, P. P; BÜSCHEL, M; ZEHE, A et al.Wissenschaftliche Zeitschrift der Technischen Universität Dresden. 1990, Vol 39, Num 1, pp 145-150, issn 0043-6925Conference Paper

Particularités de la diffraction de Bragg des rayons X sur les films épitaxiaux de composition inhomogèneKYUTT, R. N.Fizika tverdogo tela. 1989, Vol 31, Num 8, pp 270-272, issn 0367-3294Article

Rheed studies of CuInSe₂ epitaxial filmsDON, E. R; RUSSELL, G. J; HILL, R et al.IEEE photovoltaic specialists conference. 18. 1985, pp 1060-1064Conference Paper

An interfactant for metal oxide heteroepitaxy: Growth of dispersed ZrO₂(111) films on FeO(111) precovered Ru(0001)KETTELER, Guido; RANKE, Wolfgang; SCHLÖGL, Robert et al.PCCP. Physical chemistry chemical physics (Print). 2004, Vol 6, Num 2, pp 205-208, issn 1463-9076, 4 p.Article

On the energy and configuration of orthogonal misfit dislocations : MultilayersHIRTH, J. P.Scripta metallurgica et materialia. 1992, Vol 27, Num 6, pp 681-686, issn 0956-716XArticle

Quasi-epitaxial growth of diacetylene films by vacuum depositionKANETAKE, T; TOMIOKA, Y; IMAZEKI, S et al.Journal of applied physics. 1992, Vol 72, Num 3, pp 938-947, issn 0021-8979Article

Heteroepitaxial growth of strained and relaxed layers of InAs on InP investigated by RHEED and HRTEMHOLLINGER, G; GENDRY, M; DUVAULT, J. L et al.Applied surface science. 1992, Vol 56-58, pp 665-671, issn 0169-4332, bConference Paper

Surface composition of epitaxial films of gallium arsenide and related compounds after termination of their growth from the liquid phaseBOLKHOVITYANOV, YU. B; DOLBAK, A. E.Sugar technology reviews. 1990, Vol 119, Num 1, pp 139-144, issn 0081-9204Article

Shunt-analysis of epitaxial silicon thin-film solar cells by lock-in thermographyBAU, Sandra; HULJIC, Dominik M; ISENBERG, Jörg et al.sans titre. 2002, pp 1335-1338, isbn 0-7803-7471-1, 4 p.Conference Paper

Positron beam defect profilling of silicon epitaxial layersSCHUT, H; VAN VEEN, A; VAN DE WALLE, G. F. A et al.Journal of applied physics. 1991, Vol 70, Num 6, pp 3003-3006, issn 0021-8979Article

Epitaxy of (100) Cu on (100) Si by evaporation near room temperatures : in-plane epitaxial relation and channeling analysisCHIN-AN CHANG; LIU, J. C; ANGILELLO, J et al.Applied physics letters. 1990, Vol 57, Num 21, pp 2239-2240, issn 0003-6951Article

The growth and characterisation of epitaxial insulating HoF₃ layers on siliconGRIFFITHS, C. L; MACDONALD, J. E; WILLIAMS, R. H et al.Applied surface science. 1992, Vol 56-58, pp 782-788, issn 0169-4332, bConference Paper

Accommodation of misfit in epitaxial interfaces : discrete Frenkel-Kontorova model with real interatomic forcesMARKOV, I; TRAYANOV, A.Journal of physics. Condensed matter (Print). 1990, Vol 2, Num 33, pp 6965-6980, issn 0953-8984Article

Solar cells made by the integral screen printing procedure on various epitaxial UMG-Si-substratesCAYMAX, M; EYCKMANS, M; PIZZINI, S et al.EC photovoltaic solar energy conference. 7. 1987, pp 800-805Conference Paper

Experimental demonstration of enhancement mode GaN MOSFETsHUANG, W; CHOW, T. P; KHAN, T et al.Physica status solidi. A, Applications and materials science (Print). 2007, Vol 204, Num 6, pp 2064-2067, issn 1862-6300, 4 p.Conference Paper

Oriented films of epitaxial MFI overgrowthsZHENG WANG; HEDLUND, Jonas; HONG ZHANG et al.Microporous and mesoporous materials. 2006, Vol 95, Num 1-3, pp 86-91, issn 1387-1811, 6 p.Article

The role of frictional stress in misfit dislocation generation : MultilayersJESSER, W. A.Scripta metallurgica et materialia. 1992, Vol 27, Num 6, pp 675-680, issn 0956-716XArticle

Lattice parameters and local atomic structure of silicon-rich Si-Ge/Si (100) filmsMATSUURA, M; TONNERRE, J. M; CARGILL, G. S et al.Physical review. B, Condensed matter. 1991, Vol 44, Num 8, pp 3842-3849, issn 0163-1829Article

Gallium arsenide and other compound semiconductors on siliconFANG, S. F; ADOMI, K; IYER, S et al.Journal of applied physics. 1990, Vol 68, Num 7, pp R31-R58, issn 0021-8979Article

Mechanism of buried β-SiC formation by implanted carbon in siliconREESON, K. J; STOEMENOS, J; HEMMENT, P. L. F et al.Thin solid films. 1990, Vol 191, Num 1, pp 147-164, issn 0040-6090Article

Antiparallel crystal orientation in CoSi₂ epitaxial bilayers formed by ion implantationWU, M. F; VANTOMME, A; LANGOUCHE, G et al.Applied physics letters. 1990, Vol 57, Num 19, pp 1973-1975, issn 0003-6951Article

The role of absorption in x-ray diffraction measurements from epitaxial layers and substratesSTEVENSON, A. W; PAIN, G. N.Journal of applied physics. 1990, Vol 68, Num 2, pp 569-573, issn 0021-8979Article